STW48N60DM2 N Channel MOSFET Transistor 600V 40A 300W Through Hole TO-247-3

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Yougou Electronics (Shenzhen) Co., Ltd.

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STW48N60DM2 N Channel MOSFET Transistor 600V 40A 300W Through Hole TO-247-3

Name: STW48N60DM2 N Channel MOSFET Transistor 600V 40A 300W Through Hole TO2473
Brand: Original
Price: 1 USD

Wholesale STW48N60DM2 N Channel MOSFET Transistor 600V 40A 300W Through Hole TO-247-3 from china suppliers

Model Number : STW48N60DM2

Place of Origin : Guangdong, China

Brand Name : Original

Packaging Details : Standard carton

MOQ : 1

Price : Negotiable

Type : MOSFET

Power - Max : 300W

Operating Temperature : -55°C ~ 150°C (TJ)

Mounting Type : Through Hole

Package / Case : TO-247-3

FET Type : N-Channel

Drain to Source Voltage (Vdss) : 600V

Current - Continuous Drain (Id) @ 25°C : 40A

Rds On (Max) @ Id, Vgs : 79mOhm at 20A, 10V

Vgs(th) (Max) @ Id : 5V at 250uA

Gate Charge (Qg) (Max) @ Vgs : 70 nC at 10V

Input Capacitance (Ciss) (Max) @ Vds : 3250 pF @ 100V

Stock : In Stock

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STW48N60DM2 N-Channel MDmesh DM2 Power MOSFET - High-Efficiency Power Conversion Solution

Achieve Optimal Efficiency with Fast Recovery and Low On-Resistance

Looking for a high-performance power MOSFET that can meet the demands of the most efficient converters? The STW48N60DM2 N-Channel MOSFET is the solution you've been searching for. This powerful MOSFET is a part of the MDmesh DM2 Fast Recovery Diode family and boasts some impressive features that make it ideal for switch applications, bridge topologies, and ZVS phase-shift converters. One of the key features of the STW48N60DM2 is its fast recovery body diode.

This diode allows for very low recovery charge (Qrr) and time (trr) and low RDS(on). Additionally, this MOSFET has very low gate charge and input capacitance, making it the perfect choice for high-efficiency converters. It has also been 100% avalanche tested and has very high dv/dt durability, ensuring exceptional performance and longevity. For added peace of mind, the STW48N60DM2 MOSFET is equipped with zener protection, ensuring its safe and reliable operation. With its impressive features and exceptional performance, the STW48N60DM2 is the perfect choice for anyone looking to achieve optimal efficiency in their power conversion applications.

Category	Discrete Semiconductor Products
Category	Transistors - FETs, MOSFETs - Single
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	79mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	70 nC @ 10 V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	3250 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Base Product Number	STW48

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